关键词: 富硅氮化硅, Er, Ni, 光致发光

Abstract: Er-doped Si-rich nitride ( SRN ∶Er) films and three-period superlattices of SRN ∶Er Ni were deposited by reactive magnetronsputtering technique and annealed at 1100 ℃. The photo luminescence spectra of SRN ∶Er films show two emission bands, one centered at 665～750 nm and another peaked at 1. 54μm, where the 665～750 nmone is due to Si nanocrystals in SRN and the 1. 54μmone is characteristic for Er3+. The photo luminescence spectra of the super lattices exhibit fine structures of 3 + Er light emission around 520, 550 and 850 nm and a 12-fold enhanced Er light emission at 1. 54 μm. The appearance of these fine structures indicates that the local environments around Er3 + become ordered and Er3+ is much more optically active in such ordered environments than in SRN ∶Er films. Raman-scattering spectra measurements demonstrate an increase in the number of Sinanocrystals. Therefore, the 12-fold enhancement at 1.54μmis a result of the enhancement in the Er3+ optical activation and the increase in the number of Si nanocrystals .

Key words: Si-rich nitride, Er, Ni, photoluminescence