Acta Scientiarum Naturalium Universitatis Pekinensis

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Resistive RAM: A Novel Generation Memory Technology

WANG Yuan, JIA Song, GAN Xuewen   

  1. Key Laboratory of Microelectronic Devices and Circuits MOE, Institute of Microelectronics, Peking University, Beijing 100871;
  • Received:2010-07-14 Online:2011-05-20 Published:2011-05-20


王源, 贾嵩,甘学温   

  1. 北京大学微电子学研究院, 教育部微电子器件与电路重点实验室, 北京100871;

Abstract: Resistive random access memory (RRAM) is extensively concerned because of its excellent characteristics, namely, simple cell structure, high speed, low power and high density. The basic structure and operation principle of RRAM are presented. The promising RRAM technologies, such as 3D integration and multi-level storage, are discussed.

Key words: nonvolatile memory, resistive random access memory, resistance reversible change, 3D integration, multi-level storage

摘要: 阻变存储器具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点,受到广泛的关注。作者论述了 RRAM 的基本结构和工作原理, 并介绍了三维集成和多值存储等 RRAM 新型技术。

关键词: 不挥发性存储器, 阻变存储器, 电阻可逆转换, 三维集成, 多值存储

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