Acta Scientiarum Naturalium Universitatis Pekinensis ›› 2018, Vol. 54 ›› Issue (5): 946-950.DOI: 10.13209/j.0479-8023.2018.044

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Improvements on Transient Power Law Model under HBM Stress

CAO Xin1, CAO Jian1,†, WANG Yize2, WANG Yuan2, ZHANG Xing1,2,†   

  1. 1. School of Software and Microelectronics, Peking University, Beijing 102600
    2. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871
  • Received:2017-11-09 Revised:2018-03-01 Online:2018-09-20 Published:2018-09-20
  • Contact: CAO Jian, E-mail: caojian(at); ZHANG Xing, E-mail: zhx(at)


曹鑫1, 曹健1,†, 王艺泽2, 王源2, 张兴1,2,†   

  1. 1. 北京大学软件与微电子学院, 北京 102600
    2. 北京大学微电子学研究院, 北京 100871
  • 通讯作者: 曹健, E-mail: caojian(at); 张兴, E-mail: zhx(at)
  • 基金资助:


An improved model is proposed based on the transient power law model under Human Body Model (HBM) stress. This model can predict the gate oxide breakdown statistically under HBM stress. Through HSPICE simulation tool, the corresponding DC effective voltage on the MOS can be calculated. The scatter chart of the precharge voltage of the HBM circuit with the effective DC voltages of the MOS shows a linear relationship. Using the Laplace transform, the linear relationship is proved. Compared with the existing transient power law model, the improved model reduces the computational complexity under the HBM stress and is easier to predict the MOS gate oxide breakdown statistically. The proposed model provides an important reference for the evaluation of the reliability of the MOS gate oxide under the impact of HBM.

Key words: electrostatic discharge (ESD), transient power law model, gate oxide breakdown, human body model (HBM)


提出一种改进的基于人体静电冲击模型(Human Body Model, HBM)应力的瞬态功率模型。利用HSPICE仿真软件, 模拟MOS管遭受的HBM应力, 得到对应的等效直流电压。HBM电路的预充电电压与MOS管对应的等效直流电压值的散点图表明, 两者保持线性关系, 并通过拉普拉斯变化得到证明。与现有的瞬态功率模型相比, 改进后的模型降低了在HBM应力作用下的计算复杂度, 可以更加简便地从统计学上预测MOS管栅氧击穿的发生, 给HBM冲击作用下MOS管栅氧化层可靠性的评估提供参考。

关键词: 静电放电, 瞬态功率模型, 栅氧击穿, 人体静电冲击模型

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