Abstract: A novel ESD clamp protection circuit named gate, controlled SCR cascade diode string (gcSCR, CDS) is proposed. Compared with the traditional CDS device, this novel structure has a high ESD performance due to its low leakage current and low turn, on resistance by inserting a SCR transistor. A gate, controlled PMOS transistor is also used to immunize its latch, up effects. This new structure is performed in 0.35?μm CMOS process. The measured results show that it has a low leakage current about 12nA and a high ESD robustness above 8kV.

Key words: ESD, gcSCR, CDS, leakage current, latch-up effect

摘要： 提出了一种新型抗静电泄放(ESD)钳位保护电路??栅控可控硅级联二极管串(gcSCR, CDS)结构。相比传统级联二极管串(CDS)结构,新结构利用插入的SCR管减小了钳位电路的泄漏电流和导通电阻,提高了电路的抗ESD能力;利用栅控的PMOS管,提高了维持电压,抑制了闩锁效应。0.35?μm标准CMOS工艺流片结果表明,该结构泄漏电流为12nA,抗ESD能力超过8kV。

关键词: 静电泄放, gcSCR, CDS, 泄漏电流, 闩锁效应