13.5 GHz fT SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

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13.5 GHz f_T SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

JIA Lin¹，NI Xuewen¹，MO Bangxian¹，GUAN Xudong¹，ZHANG Lu¹，NING Baojun¹，HAN Ruqi¹，LI Yongkang²，ZHOU Junming²

¹Institute of Microelectronics, Peking University, Beijing，100871; ²Institute of Physics, Academia Sinica, Beijing, 100080

Received:2000-03-20 Online:2001-05-20 Published:2001-05-20

f_T为13.5GHz的平面结构SiGe异质结双极晶体管的研制

贾霖¹,倪学文¹,莫邦燹¹,关旭东¹,张录¹,宁宝俊¹,韩汝琦¹,李永康²,周均铭²

¹北京大学微电子学研究所，北京，100871; ²中国科学院物理研究所，北京，100080

Abstract

Abstract: A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy (MBE). The SiGe HBT(S_e=3μm×8μm) has a current gain β of 30 to 50, an emitter-collector breakdown voltage BV_CEO of 5V, the maximum cutoff frequency f_T of 13.5GHz at room temperature.

Key words: polysilicon technology, MBE, SiGe HBT

摘要： 利用多晶硅发射极技术与分子束外延生长SiGe基区技术相结合，研制成适于集成的平面结构、发射结面积为3μm×8μm的SiGe异质结双极晶体管(HBT)。室温下该晶体管的直流电流增益β为30到50，基极开路下，收集极-发射极反向击穿电压BV_CEO为5V，晶体管的截止频率f_T为13.5GHz。

关键词: 多晶硅发射极技术, 分子束外延SiGe基区, 锗硅异质结双极晶体管

CLC Number:

TN321

JIA Lin,NI Xuewen,MO Bangxian,GUAN Xudong,ZHANG Lu,NING Baojun,HAN Ruqi,LI Yongkang,ZHOU Junming. 13.5 GHz f_T SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

贾霖,倪学文,莫邦燹,关旭东,张录,宁宝俊,韩汝琦,李永康,周均铭. f_T为13.5GHz的平面结构SiGe异质结双极晶体管的研制[J]. 北京大学学报（自然科学版）.

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https://xbna.pku.edu.cn/EN/Y2001/V37/I3/353

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13.5 GHz f_T SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

f_T为13.5GHz的平面结构SiGe异质结双极晶体管的研制

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13.5 GHz fT SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

fT为13.5GHz的平面结构SiGe异质结双极晶体管的研制

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Abstract

Cite this article

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13.5 GHz f_T SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

f_T为13.5GHz的平面结构SiGe异质结双极晶体管的研制