Acta Scientiarum Naturalium Universitatis Pekinensis

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13.5 GHz fT SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology

JIA Lin1,NI Xuewen1,MO Bangxian1,GUAN Xudong1,ZHANG Lu1,NING Baojun1,HAN Ruqi1,LI Yongkang2,ZHOU Junming2   

  1. 1Institute of Microelectronics, Peking University, Beijing,100871; 2Institute of Physics, Academia Sinica, Beijing, 100080
  • Received:2000-03-20 Online:2001-05-20 Published:2001-05-20



  1. 1北京大学微电子学研究所,北京,100871; 2中国科学院物理研究所,北京,100080

Abstract: A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy (MBE). The SiGe HBT(Se=3μm×8μm) has a current gain β of 30 to 50, an emitter-collector breakdown voltage BVCEO of 5V, the maximum cutoff frequency fT of 13.5GHz at room temperature.

Key words: polysilicon technology, MBE, SiGe HBT

摘要: 利用多晶硅发射极技术与分子束外延生长SiGe基区技术相结合,研制成适于集成的平面结构、发射结面积为3μm×8μm的SiGe异质结双极晶体管(HBT)。室温下该晶体管的直流电流增益β为30到50,基极开路下,收集极-发射极反向击穿电压BVCEO为5V,晶体管的截止频率fT为13.5GHz。

关键词: 多晶硅发射极技术, 分子束外延SiGe基区, 锗硅异质结双极晶体管

CLC Number: