Acta Scientiarum Naturalium Universitatis Pekinensis

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Ultra-high Density Data Storage on A Novel All-organic Complex Thin Film

LI Jianchang, XUE Zengquan, HOU Shimin, LIU Weimin, WU Quande   

  1. Department of Electronics, Peking University, Beijing, 100871
  • Received:1999-10-21 Online:2000-05-20 Published:2000-05-20



Abstract: A novel all-organic complex thin film, tetrathiofulvalene/m-nitrobenzylidene propanedinitrile(TTF/m-NBP), was grown by a vacuum hot-wall deposition. The film was characterized by Fourier transform infrared spectroscopy and transmission electron microscopy. It was found that large scale single crystal TTF/m-NBP film can be obtained by this method. Atomic resolution surface images were observed both with atomic force microscope(AFM) and scanning tunneling microscope(STM). High density data storage was realized by applying voltage pulses between the STM tip and the substrate. The diameter of the small recording marks is about 1.2nm. The I-V characteristic analyses showed that the recording mechanism may be mainly due to the charge transfer between the electron donor TTF and the electron acceptor m-NBP molecules induced by the applied pulse voltage.

Key words: ultra-high density data storage, organic complex thin film, STM

摘要: 用真空热壁法生长了一种新型全有机复合薄膜TTF/m-NBP(tetrathiofulvalene/m-nitrobenzylidene propanedinitrile)。用透射电子显微镜和傅立叶变换红外光谱对薄膜的表征结果证明,该制备方法能够生长出较大面积的化学结构完善的单晶薄膜。用原子力显微镜(AFM)和扫描隧道显微镜(STM)都观察到了TTF/m-NBP薄膜表面的原子级分辨像。通过STM针尖施加脉冲电压在TTF/m-NBP薄膜上实现了纳米级的信息存储,最小记录点直径约为1.2nm。扫描隧道谱分析表明TTF/m-NBP薄膜具有很好的电开关“记忆”特性。初步研究认为其电开关机制可能主要是脉冲电压诱发的TTF电子给体与m-NBP电子受体分子间的电荷转移的变化所致。

关键词: 超高密度数据存储, 有机复合薄膜, 扫描隧道显微镜

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