北京大学学报(自然科学版)

基于环栅纳米线隧穿场效应晶体管的解析模型

何媛1,2,王骏成2,魏康亮2,刘晓彦2   

  1. 1. 北京大学深圳研究生院, 深圳 518055; 2. 北京大学信息科学技术学院微电子学研究院, 北京 100871;
  • 收稿日期:2013-03-28 出版日期:2014-07-20 发布日期:2014-07-20

An Analytical Model of Gate-All-Around Nanowire Tunnel FET

HE Yuan1,2, WANG Juncheng2, WEI Kangliang2, LIU Xiaoyan2   

  1. 1. Shenzhen Graduate School, Peking University, Shenzhen 518055; 2. Institute of Microelectronics, Peking University, School of Electronics Engineering and Computer Science, Beijing 100871;
  • Received:2013-03-28 Online:2014-07-20 Published:2014-07-20

摘要: 对环栅纳米线结构的隧穿场效应晶体管进行建模分析, 给出电流解析模型, 证明隧穿场效应管有良好的亚阈特性。研究发现, 环栅纳米线隧穿场效应管的亚阈值斜率SS的大小与圆柱体硅直径dnw、环栅氧化层厚度tox以及漏电压Vdd的变化规律均成正比, 即圆柱体硅直径dnw、环栅氧化层厚度tox和漏电压Vdd越小, 亚阈区的性能越好。这一模型的研究为场效应晶体管在低功耗电路中的应用打下良好基础。

关键词: 隧穿晶体管, 解析模型, 低功耗, 亚阈值斜率

Abstract: An analytical model for gate-all-around (GAA) nanowire tunnel FETs (TFET) is proposed. It proves that the TFETs have good performance in sub-threshold region. Research shows that the sub-threshold slop of GAA nanowire TFET is proportional to several model parameters, such as the diameter, the thickness of oxide layer, and the voltage of drain. The model and simulation would lay a good foundation for its future application in low-power circuits.

Key words: tunnel FETs, analytical model, low power, sub-threshold slop

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