石墨烯场效应晶体管的光响应特性研究

北京大学学报（自然科学版）

石墨烯场效应晶体管的光响应特性研究

魏子钧¹,王志刚²,李晨¹,郭剑¹,任黎明¹,张朝晖²,傅云义¹,黄如¹

1. 北京大学微电子学研究院, 北京 100871; 2. 北京大学物理学院人工微结构与介观物理国家重点实验室,北京100871;

收稿日期:2013-03-28 出版日期:2014-07-20 发布日期:2014-07-20

Studies on the Photoresponse in Graphene-Based Field-Effect Transistors

WEI Zijun¹, WANG Zhigang², LI Chen¹, GUO Jian¹, REN Liming¹, ZHANG Zhaohui², FU Yunyi¹, HUANG Ru¹

1. Institute of Microelectronics, Peking University, Beijing 100871; 2. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871;

Received:2013-03-28 Online:2014-07-20 Published:2014-07-20

摘要/Abstract

摘要： 采用电子束曝光和剥离工艺制备石墨烯场效应晶体管, 并研究其光电响应特性。结果表明, 当激光光斑(波长为633 nm)照射在金属电极边缘的石墨烯沟道时, 可测得明显的光电流。背栅电压能够有效调制光电响应, 可以改变光电流的大小和方向。在背栅调控下, 光电流出现饱和现象, 石墨烯晶体管的光响应度最大达到46.5 μA /W，可用于构建基于石墨烯的新型光探测器。

关键词: 石墨烯场效应晶体管, 光电响应, 背栅调制

Abstract: Graphene-based field-effect transistors (FETs) were fabricated by electron beam lithography and lift-off process and the photoresponse in the transistor was investigated. Significant photocurrents can be detected when the channel graphene near the metal contact is illuminated by a laser spot (λ = 633 nm). Both the magnitude and direction of the photocurrent can be effectively modulated by the back-gate voltage. In addition, the photocurrent will saturate by increasing the gate voltage. A maximum responsivity of 46.5 μA/W is achieved, which can be contributed to develop the novel graphene-based photodetectors.

Key words: graphene field-effect transistors, photoresponse, back-gate modulation

中图分类号:

TN364
TN386

魏子钧,王志刚,李晨,郭剑,任黎明,张朝晖,傅云义,黄如. 石墨烯场效应晶体管的光响应特性研究[J]. 北京大学学报（自然科学版）.

WEI Zijun,WANG Zhigang,LI Chen,GUO Jian,REN Liming,ZHANG Zhaohui,FU Yunyi,HUANG Ru. Studies on the Photoresponse in Graphene-Based Field-Effect Transistors[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

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链接本文: https://xbna.pku.edu.cn/CN/

https://xbna.pku.edu.cn/CN/Y2014/V50/I4/704

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