关键词: 碳纳米管, 钯, 湿法刻蚀, 沟槽

Abstract: The authors present a “bottom-up” method, that is, a palladium film of several nanometers thickness is deposited on the carbon nanotubes (CNTs) grown on a silicon substrate covered by SiO2, then etched in fluorhydric acid solution, the nanometer-sized trenches, which are fully guided by the CNTs located at the bottom of the trenches, are formed. By performing conducting atomic force microscopy measurement, the CNTs inside the trenches were found to have a good electrical conductivity. If an additional silicon oxide layer was predeposited by magnetron sputtering on CNTs before the deposition of palladium film, the aspect ratio of trenches could be increased. By reducing the density of palladium film, the opening width of the trench would be reduced to about 100 nm. This structure with carbon nanotubes embedded in trenches could be further prepared to build nanoelectronic devices based on CNTs.

Key words: carbon nanotube, palladium, wet etching, trench