北京大学学报（自然科学版）

• 北京大学学报 •

体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件

谷永涛1,魏峰1,孙拓1,徐万劲1,冉广照1,章勇2,牛巧利2,秦国刚1,2   

  1. 1. 北京大学物理学院介观物理国家重点实验室, 北京 100871; 2. 华南师范大学光电子材料与技术研究所, 广州 510631;
  • 收稿日期:2011-03-29 出版日期:2012-03-20 发布日期:2012-03-20

Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode

GU Yongtao1, WEI Feng1, SUN Tuo1, XU Wanjin1, RAN Guangzhao1, ZHANG Yong2, NIU Qiaoli2, QIN Guogang1,2   

  1. 1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871; 2. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631;
  • Received:2011-03-29 Online:2012-03-20 Published:2012-03-20

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摘要： 分别以p型体硅和p型薄膜微晶硅为阳极, 以掺入MEH-PPV的PFO为发光层, 以透明金属Sm/Au为阴极, 制作了顶发光白光器件。器件结构是: 硅阳极/PEDOT:PSS/MEH-PPV:PFO/Cs2CO3/Sm/Au。通过调节MEH-PPV在PFO中的质量百分比, 改进了白光器件的发射色度。当MEH-PPV的质量百分比为0.13%时, 发光在白光范围, CIE色坐标为(0.372, 0.391)。研究了器件发光效率对体硅阳极电阻率的影响, 当体硅阳极电阻率为0.079 Ω•cm时, 器件电流效率和功率效率都达到极大, 分别是0.191 cd/A和0.131 lm/W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极, 通过调节Ni层厚度, 优化器件效率。当Ni层厚度为2 nm时, 薄膜硅阳极器件的电流效率和功率效率分别达到最大值: 0.371 cd/A和0.187 lm/W, 相对于最佳电阻率体硅阳极器件分别提高了94%和43%。

关键词: 聚合物白光, p型体硅, 薄膜微晶硅, MEH-PPV, PFO

Abstract: Polymer white light-emitting diodes (PWLEDs) with p-type Si and nanometer-thick (~10 nm) polycrystalline p-Si anode are reported. The structures of the PWLEDs are Si anodes/ PEDOT:PSS/ MEH-PPV: PFO/Cs2CO3/Sm/Au. PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer. It is found that when MEH-PPV is 0.13%, the PWLEDs show white emission with CIE coordinates of (0.372, 0.391). The optimized p-Si anode resistivity of the PWLEDs is investigated. When the resistivity of p-Si is 0.079 Ω•cm, a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained. Furthermore, polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer, the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm. In comparasion with PWLEDs with p-Si anode, the maximum efficiency has raised 94% and 43% respectively.

Key words: polymer white light-emitting diode, p-Si, ultrathin polycrystalline Si, MEH-PPV, PFO

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