关键词: 分子动力学, 电子能损, 辐照损伤, SiC

Abstract: Molecular dynamics（MD）simulation was performed to study the irradiation-induced damage defects in SiC sample. The empirical Tersoff potential was employed to describe the interaction between SiC atoms， and 10 keV Si and 200 keV Au were used as incident ions. The electronic energy loss of the incident ions was coupled to the target atoms based on the ion track model. The simulation results indicate that the electronic energy loss can increase the maximum number of the displaced atoms. However， it only has slight influence on the final defects number， which maintains the power-law dependence on the nuclear energy loss.

Key words: molecular dynamics, electronic energy loss, irradiation defect, SiC