一种高阶温度补偿的CMOS带隙参考源

北京大学学报（自然科学版）

一种高阶温度补偿的CMOS带隙参考源

陈江华,倪学文,莫邦燹

北京大学信息科学技术学院微电子学系，北京100871；

收稿日期:2007-05-25 出版日期:2008-07-20 发布日期:2008-07-20

A High-Order Temperature Compensated CMOS Bandgap Reference

CHEN Jianghua， NI Xuewen， MO Bangxian

Department of Microelectronics, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871；

Received:2007-05-25 Online:2008-07-20 Published:2008-07-20

摘要/Abstract

摘要： 介绍了一种基于CSMC 0.5-μm 2P3M n-阱混合信号CMOS工艺的高阶温度补偿的带隙参考源。该CMOS带隙参考源利用了Buck电压转换单元和与温度无关的电流，提供了一种对基极-发射极电压V_BE的高阶温度补偿。它还采用共源共栅结构以提高电源抑制比。在5V电源电压下，温度变化范围为-20～100℃时，该带隙参考源的温度系数为5.6ppm/℃。当电源电压变化范围为4～6V时，带隙参考源输出电压的变化为0.4mV。

关键词: 模拟集成电路, CMOS, 带隙参考源, 低温度系数, 高阶温度补偿

Abstract: A high-order temperature compensated bandgap reference (BGR) based on CSMC 0.5-μm 2P3M n-well mixed signal CMOS process is presented. This novel proposed CMOS bandgap reference takes advantage of both a Buck's voltage transfer cell and a temperature independent current, to provide a high-order temperature compensation of the base-emitter voltage V_BE. Cascode structures are also introduced in this CMOS bandgap reference to improve the power supply rejection ratio (PSRR). This circuit achieves 5.6ppm/℃ of temperature coefficient with temperature range from -20 to 100℃ at 5V power supply. The variation in the output voltage of the bandgap reference is 0.4mV when power supply changes from 4V to 6V.

Key words: analog integrated circuits, CMOS, bandgap reference, low temperature coefficient, high-order temperature compensation

中图分类号:

TN432

陈江华,倪学文,莫邦燹. 一种高阶温度补偿的CMOS带隙参考源[J]. 北京大学学报（自然科学版）.

CHEN Jianghua,NI Xuewen,MO Bangxian. A High-Order Temperature Compensated CMOS Bandgap Reference[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

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链接本文: https://xbna.pku.edu.cn/CN/

https://xbna.pku.edu.cn/CN/Y2008/V44/I4/517

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