北京大学学报(自然科学版)

金属In与掺Nb的SrTiO3金属半导体接触研究

王世奇,马玉彬   

  1. 北京大学物理学院系,北京100871;
  • 收稿日期:2007-05-15 出版日期:2008-01-20 发布日期:2008-01-20

The Metal-Semiconductor Junction of Indium and Nb Doped SrTiO3

WANG Shiqi , MA Yubin   

  1. School of Physics, Peking University, Beijing 100871;
  • Received:2007-05-15 Online:2008-01-20 Published:2008-01-20

摘要: 研究了金属In与掺不同Nb浓度的SrTiO3(Nb-STO)衬底之间构成的金属半导体结(金-半结)。测量了不同温度下的I-V曲线。在掺杂浓度为0.05 wt.%衬底构成的金-半结I-V曲线中,反向电压部分得到的有效因子n在1.05~1.10之间,且随温度变化很小,而正向的n很大,表明出势垒随着偏压的变化改变很大。金属In与Nb-STO衬底之间构成的金-半结在浓度为0.05 wt.%和0.7 wt.%的掺杂情况下,结点都表现出非线性的I-V关系,均不能视为欧姆接触。

关键词: Nb掺杂SrTiO3, 金属-半导体接触

Abstract: The metal-semiconductor junction of indium and Nb doped SrTiO3 were fabricated. The current-voltage of the junction were obtained by three terminals method. In the junction of 0.05 wt.% doped Nb-STO, the effect factor n derived from negative voltage are in range 1.05-1.10 and almost independent of temperature. The junctions both show non-linear I-V characteristic.The contact between Indium and Nb-STO could not be treated as Ohmic contact, even in high doped Nb-STO.

Key words: Niobium doped SrTiO3, metal-semiconductor contact

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