新型低泄漏防闩锁ESD钳位保护电路

北京大学学报（自然科学版）

新型低泄漏防闩锁ESD钳位保护电路

王源,贾嵩¹,张钢刚, 陈中建, 吉利久

北京大学微电子研究院,北京,100871,¹通讯作者,E-mail:jias@pku.edu.cn

收稿日期:2006-04-20 出版日期:2007-05-20 发布日期:2007-05-20

A Novel ESD Clamp Protection Circuit with Low Leakage Current and High Latch, up Immunity

WANG Yuan, JIA, Song¹, ZHANG Ganggang, CHEN Zhongjian, JI Lijiu

Institute of Microelectronics, Peking University, Beijing, 100871, ¹Corresponding Author,E-mail:jias@pku.edu.cn

Received:2006-04-20 Online:2007-05-20 Published:2007-05-20

摘要/Abstract

摘要： 提出了一种新型抗静电泄放(ESD)钳位保护电路??栅控可控硅级联二极管串(gcSCR, CDS)结构。相比传统级联二极管串(CDS)结构,新结构利用插入的SCR管减小了钳位电路的泄漏电流和导通电阻,提高了电路的抗ESD能力;利用栅控的PMOS管,提高了维持电压,抑制了闩锁效应。0.35?μm标准CMOS工艺流片结果表明,该结构泄漏电流为12nA,抗ESD能力超过8kV。

关键词: 静电泄放, gcSCR, CDS, 泄漏电流, 闩锁效应

Abstract: A novel ESD clamp protection circuit named gate, controlled SCR cascade diode string (gcSCR, CDS) is proposed. Compared with the traditional CDS device, this novel structure has a high ESD performance due to its low leakage current and low turn, on resistance by inserting a SCR transistor. A gate, controlled PMOS transistor is also used to immunize its latch, up effects. This new structure is performed in 0.35?μm CMOS process. The measured results show that it has a low leakage current about 12nA and a high ESD robustness above 8kV.

Key words: ESD, gcSCR, CDS, leakage current, latch-up effect

中图分类号:

王源,贾嵩,张钢刚, 陈中建, 吉利久. 新型低泄漏防闩锁ESD钳位保护电路[J]. 北京大学学报（自然科学版）.

WANG Yuan,JIA,Song,ZHANG Ganggang,CHEN Zhongjian,JI Lijiu. A Novel ESD Clamp Protection Circuit with Low Leakage Current and High Latch, up Immunity[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

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https://xbna.pku.edu.cn/CN/Y2007/V43/I3/400

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