北京大学学报(自然科学版)

场效应纳电子晶体管的构造和电学特性测量

邓楠,张琦锋,李萍剑,申自勇,侯士敏,吴锦雷1   

  • 收稿日期:2004-04-23 出版日期:2005-09-20 发布日期:2005-09-20

Design of Field-Effect Nano-Transistors and Measurement of Their Electrical Property

DENG Nan, ZHANG Qifeng, LI Pingjian, SHEN Ziyong, HOU Shimin, WU Jinlei1   

  • Received:2004-04-23 Online:2005-09-20 Published:2005-09-20

摘要: 研究了场效应纳电子晶体管构造过程中金属电极的结构设计,源-漏电极高度、SiO2绝缘层厚度以及金属电极选材等因素对器件性能有关键的影响。在此基础上测量了单壁碳纳米管束的场效应行为,构造成功基于单壁碳纳米管束的场效应晶体管。

关键词: 单壁碳纳米管, 化学气相沉积, 肖特基势垒, 场效应晶体管

Abstract: Structure design of metal nano-electrode for nano-electronic device is investigated. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the SiO2 insulation layer and the materials of the nano-electrode play important roles in the electrical property of the nano electronic device. A single-walled carbon nanotubes bundle based on field-effect transistor is fabricated accordingly, and its I-V characteristic is measured.

Key words: single walled carbon nanotube, chemical vapor deposition, schottky barriers, field-effect transistor

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