用微结构改进InGaAlP量子阱发光二极管的出光强度

北京大学学报（自然科学版）

用微结构改进InGaAlP量子阱发光二极管的出光强度

隋文辉¹, 章蓓¹, 王大军¹, 栾峰¹, 徐万劲¹, 马晓宇²

¹北京大学物理学院、人工微结构和介观物理国家重点实验室，北京，100871；²中国科学院半导体所，北京，100083

收稿日期:2002-04-15 出版日期:2003-05-20 发布日期:2003-05-20

The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures

SUI Wenhui¹, ZHANG Bei¹, WANG Dajun¹, LUAN Feng¹, XU Wanjin¹, MA Xiaoyu²

¹School of Physics, Peking University, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing, 100871；²Institute of Semiconductors, The Chinese Academy of Science, Beijing, 100083

Received:2002-04-15 Online:2003-05-20 Published:2003-05-20

摘要/Abstract

摘要： 针对半导体发光二极管(LED)出光效率低下的问题，提出了一个在LED顶部引入周期性微结构的新设想。根据这一设想，采用简单的微加工技术研制成功带有环形槽微结构的圆台形InGaAlP量子阱LED。结果表明，这种新型LED在竖直方向的出射光强比不带微结构的LED有明显增强。这一成功为改进发光二极管的出光效率提供了新的途径。

关键词: 发光二极管, 出光效率, InGaAlP量子阱, 微结构

Abstract: To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED), a proposal of introducing microstructures onto the top of LED was presented. Based on this idea, the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication. As a result, the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures. This success provides a new method for improving extraction efficiency from LED.

Key words: light emitting diode, extraction efficiency, InGaAlP quantum well, microstructure

中图分类号:

隋文辉, 章蓓, 王大军, 栾峰, 徐万劲, 马晓宇. 用微结构改进InGaAlP量子阱发光二极管的出光强度[J]. 北京大学学报（自然科学版）.

SUI Wenhui,ZHANG Bei,WANG Dajun,LUAN Feng,XU Wanjin,MA Xiaoyu. The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

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https://xbna.pku.edu.cn/CN/Y2003/V39/I3/331

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