关键词: MOSFET, 阈值电压漂移, 辐照效应, 辐照敏感性

Abstract: An analytical MOSFET threshold voltage shift model due to radiation in the low-dose range has been developed for circuit simulations. Experimental data in the literature shows that the model predictions are in good agreement. It is simple in functional form and hence computationally efficient. It can be used as a basic circuit simulation tool for analysing MOSFET exposed to a nuclear environment up to about 1Mrad(Si). In accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated PMOS devices. However, if the radiation sensitivity is defined in the way we did it, the results indicated NMOS rather than PMOS devices are more sensitive, especially at low doses. This is important from the standpoint of their possible application in dosimetry.

Key words: MOSFET, radiation effects, threshold voltage shift, radiation sensitivity