北京大学学报（自然科学版）

Al2O3或TiO2掺杂的ScSZ固体电解质纳米晶薄膜的制备及表征

张亚文,杨宇,金舒,田曙坚,李国宝,贾江涛,廖春生,严纯华   

  1. 北京大学稀土材料化学及应用国家重点实验室，北京大学-香港大学稀土材料与生物无机联合实验室，北京，100871
  • 收稿日期:2000-06-22 出版日期:2001-03-20 发布日期:2001-03-20

Preparation and Characterization of Nanocrystalline Thin Films of Al2O3 or TiO2 Doped Scandia Stabilized Zirconia Solid Electrolytes

ZHANG Yawen，YANG Yu，JIN Shu，TIAN Shujian，LI Guobao，JIA Jiangtao，LIAO Chunsheng，YAN Chunhua   

  1. State Key Lab of Rare Earth Materials Chemistry and Applications & PKU-HKU Joint Lab on Rare Earth Materials and Bioinorganic Chemistry, Peking University, Beijing, 100871, China
  • Received:2000-06-22 Online:2001-03-20 Published:2001-03-20

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摘要： 利用溶胶-凝胶旋涂法，在单晶硅基片(100)上分别制得了厚度约为0.31μm的(Al2O3)0.10(Sc2O3)0.08(ZrO2)0.82和0.36μm的(Sc2O3)0.125(TiO2)0.175(ZrO2)0.70固体电解质纳米晶薄膜。烧结实验结果表明，两种薄膜均在650℃以上开始晶化，温度越高，晶化越完全，在800℃可完全晶化；所得纳米晶颗粒呈纯的萤石结构立方相；铝和钛掺杂的纳米晶颗粒的平均大小分别为47和51nm。铝掺杂的薄膜非常均匀致密，然而，钛掺杂的薄膜存在少量微气孔。

关键词: 铝或钛掺杂的氧化钪稳定的氧化锆, 纳米晶薄膜, Sol-Gel制备, 表征

Abstract: Dense,crack-free and uniform nanocrystalline (Al2O3)0.10(Sc2O3)0.08(ZrO2)0.82 and (Sc2O3)0.125(TiO2)0.175(ZrO2)0.70 thin films with thickness of 0.31μm and 0.36μm respectively on Si(100) substrate, have been successfully prepared by a Sol-Gel spin coating method. Cubic nanocrystals can be obtained at relatively low sintering temperature with an average grain size of about 47 nm and 51 nm respectively. The aluminia-doped ScSZ thins film are the same dense as the ScSZ thin films. However, there are a small amount of pinholes found in the microstructure of the titania-doped ScSZ films.

Key words: Aluminia or titania doped scandia stabilized zirconia, nanocrystalline thin film, Sol-Gel preparatio

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