北京大学学报(自然科学版)

过冷度对Ⅲ-Ⅴ族五元系化合物AlGaInPAs LPE生长的影响

徐自亮, 徐万劲, 李力, 杨澄清, 刘弘度   

  1. 介观物理国家重点实验室,北京大学物理学系,北京,100871
  • 收稿日期:1997-05-20 出版日期:1998-09-20 发布日期:1998-09-20

The Effect of Supercool on Liquid Phase Epitaxy Growth of III-IV Quinary AlGaInPAs

XU Ziliang, XU Wanjin, LI Li, YANG Chengqing, LIU Hongdu   

  1. National Lab of Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871
  • Received:1997-05-20 Online:1998-09-20 Published:1998-09-20

摘要: 计算了Ⅲ-Ⅴ族五元系化合物AlGaInPAs与GaAs晶格匹配时的等能隙曲线以及液相外延生长AlGaInPAs/GaAs所用母液中Al的分凝系数。实验证明,由于Al的分凝,使过冷度对AlGaInPAs外延层的固相组分有显著影响,但对外延层的其他性质没有影响。

关键词: 五元系, AlGaInPAs, 液相外延, 过冷度

Abstract: The contour of the energy bandgap of III-V quinary, AlGaInPAs, lattice matched to GaAs has been calculated, and the segregation coefficient of Al in the solution used for growing AlGaInPAs/GaAs has been analysised. The effect of supercool on the solid composition of AlGaInPAs on GaAs, resulted from Al's segregating from the solution, has been demonstrated experimentally, no effect on other characteres was found.

Key words: Quinary, AlGaInPAs, liquid phase epitaxy(LPE), supercool

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