北京大学学报(自然科学版)

SnO2纳米晶簇室温带隙测定

王德煌1, 程虎民2, 梁瑞生3, 唐志列3   

  1. 1半导体超晶格国家重点实验室,北京大学物理学系,北京,100871; 2北京大学化学系,北京,100871; 3华南师范大学物理学系,广州,510631
  • 收稿日期:1996-09-28 出版日期:1997-09-20 发布日期:1997-09-20

Determination of Band-gap in SnO2 Nanoclusters at Room Temperature

WANG Dehuang1, CHENG Humin2, LIANG Ruisheng3, TANG Zhelie3   

  1. 1National Laboratory for Superlattices and Microstructures, Department of Physics, PekingUniversity, Beijing, 100871; 2Department of Chemistry, Peking University, Beijing, 100871; 3Department of Physics, Huanan Normal University, Guangzhou, 510631
  • Received:1996-09-28 Online:1997-09-20 Published:1997-09-20

摘要: 实验测定了平均直径6nm和10nm的SnO2纳米晶簇室温带隙值,得到其大小分别是3.493eV和3.307eV,并与有效质量近似法计算结果进行对比研究。

关键词: SnO2纳米晶簇, 带隙

Abstract: At room temperature band-gap in SnO2 Nanoclusters for an average diameter 6 and 10nm are determined. The values of band-gap are 3.543 and 3.351eV, respectively. The results are compared with the calculated values from the effective-mass approximation model.

Key words: SnO2 nanoclusters, band-gap

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