关键词: 载流子俘获效应, a-Si∶H太阳能光致性能衰退, Scharfetter-Gummel解法

Abstract: On the basis of experimental results, a computer analysis model has been developed using a numerical solution of Poisson's equation for a hydrogenated amorphous silicon (a-Si:H) Schottky barrier structure subjected to light soaking. The calculations agree with experimental results and further indicate that due to carrier trapping with light soaking, the increased or decreased space charge density changes electric field distribution and leads to a wider quasi-neutral region (low field "dead layer") in the structure, resulting in reduced carrier collection length. This is an important cause of light-induced degradation of a-Si:H Schottky barrier solar cells. Thus, a new way to improve the stability of a-Si:H solar cells may be proposed.

Key words: carrier trapping effects, light-induced degradation in a-Si:H solar cells, Scharfetter-Gummel solution