Abstract: GaN material is one of the most attractive semiconductor materials. It is reported that the latest research results in the nucleation and growth mechanism of the GaN nanowires, which is grown by CVD method. Emphasis was paid on the effect of growth temperature and catalyst. Through analysis of the morphologies, microstructures, and their dependence on the growth temperature and catalyst, a clear understanding on the growth of the GaN nanowires is figured out, which is the key for a controlled growth of high quality GaN nanowires and can be used for nanodevices.

Key words: GaN, nucleation, catalyst, growth mechanism

摘要： 报道了利用CVD方法研究GaN纳米线的成核和生长机理的最新结果，着重强调了生长温度和催化剂对纳米线生长的影响。通过分析GaN纳 米线的形貌、显微结构与生长温度、催化剂等影响因素之间的依赖关系，详细研究了GaN纳米线的生长过程。这一结果有助于了解一维纳米结构的生长机理，实现纳米材料的可控制生长，并有可能直接应用于GaN纳米器件的制备。

关键词: GaN, 成核, 催化剂, 生长机理