Abstract: To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED), a proposal of introducing microstructures onto the top of LED was presented. Based on this idea, the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication. As a result, the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures. This success provides a new method for improving extraction efficiency from LED.

Key words: light emitting diode, extraction efficiency, InGaAlP quantum well, microstructure

摘要： 针对半导体发光二极管(LED)出光效率低下的问题，提出了一个在LED顶部引入周期性微结构的新设想。根据这一设想，采用简单的微加工技术研制成功带有环形槽微结构的圆台形InGaAlP量子阱LED。结果表明，这种新型LED在竖直方向的出射光强比不带微结构的LED有明显增强。这一成功为改进发光二极管的出光效率提供了新的途径。

关键词: 发光二极管, 出光效率, InGaAlP量子阱, 微结构