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Research Progress on the Efficient Crushing of Rock under Nonlinear Loads
ZHAO Huanshuai, PAN Yongtai, CAO Xingjian, ZHAO Yingjia, YU Chao, QIAO Xin
Acta Scientiarum Naturalium Universitatis Pekinensis    2026, 62 (1): 198-208.   DOI: 10.13209/j.0479-8023.2025.120
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Based on the current development status of efficient rock crushing at home and abroad, the necessity of conducting research on its theory and technology is analyzed. The main advantages of nonlinear loads in rock crushing are introduced. The research progress of rock crushing under nonlinear loads is systematically analyzed in terms of nonlinear compression loading (uniaxial compression, Brazilian splitting and point load), impact loading (stress wave, mechanical impact and high-voltage electrical pulse) and vibration loading. This paper describes the advantages and disadvantages of different loading methods for breaking. In response to the problems in current research on rock crushing under nonlinear loads, the key directions for future study are proposed, such as rock mechanics model construction, macro-fine-micro multi-scale exploration, composite loading methods, energy testing and calculation, and application of intelligent technology.
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Improvements on Transient Power Law Model under HBM Stress
CAO Xin, CAO Jian, WANG Yize, WANG Yuan, ZHANG Xing
Acta Scientiarum Naturalium Universitatis Pekinensis    2018, 54 (5): 946-950.   DOI: 10.13209/j.0479-8023.2018.044
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An improved model is proposed based on the transient power law model under Human Body Model (HBM) stress. This model can predict the gate oxide breakdown statistically under HBM stress. Through HSPICE simulation tool, the corresponding DC effective voltage on the MOS can be calculated. The scatter chart of the precharge voltage of the HBM circuit with the effective DC voltages of the MOS shows a linear relationship. Using the Laplace transform, the linear relationship is proved. Compared with the existing transient power law model, the improved model reduces the computational complexity under the HBM stress and is easier to predict the MOS gate oxide breakdown statistically. The proposed model provides an important reference for the evaluation of the reliability of the MOS gate oxide under the impact of HBM.

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