Abstract: The authors establish an advanced macro-model that can be used to denote the device behaviors of ferroelectric field effect transistor (FEFET) including the dynamic overturn and the double threshold voltages transfer behaviors. The proposed advanced macro model with the simple and easily extracted model parameters can be performedin the HSPICEenvironment. The simulations show that the model can well fit the published experimental data. The proposed model can be used in the design and optimization of FEFET-based dynamic randomaccess memory circuits.

Key words: FEDRAM, FEFET, macro model, HSPICE, simulation

摘要： 从铁电晶体管的动态翻转和双阈值转移特性出发, 建立了一种基于施密特触发器的FEFET(铁电场效应晶体管)行为级宏模型。该宏模型可以表征FEFET的转移特性, 并且模型参数较少便于调节; 模型结构简单、规模较小, 可用于HSPICE 电路模拟。模拟结果与FEFET实验结果比较, 显示该模型能够很好地反映铁电材料的疲劳等因素引起的FEFET的存储性能退化, 为FEDRAM(铁电动态随机存储器)设计和优化提供了一个良好的模型基础。

关键词: 铁电动态随机存储器, 铁电场效应晶体管, 宏模型, HSPICE, 模拟