A New High Speed Current Mode Sense Amplifier for Low Power SRAM

Acta Scientiarum Naturalium Universitatis Pekinensis

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A New High Speed Current Mode Sense Amplifier for Low Power SRAM

TANG Wenyi, JIA Song, XU Heqing, MENG Qinglong, WANG Yuan, ZHANG Ganggang

Key Laboratory of Microelectronics Devices and Circuits MOE, Department of Microelectronics, Peking University, Beijing 100871;

Received:2013-03-27 Online:2014-07-20 Published:2014-07-20

适用于低功耗SRAM的高速电流模式灵敏放大器

唐文懿,贾嵩,徐鹤卿,孟庆龙,王源,张钢刚

北京大学微纳电子学系, 教育部微电子器件和电路重点实验室, 北京 100871;

Abstract

Abstract: A new fast and low power current mode SRAM (static random access memory) sense amplifier is proposed. The proposed SA (sense amplifier) is composed of two stages. It can amplify the signal to full swing fast by using a latch based high speed amplification stage. With the current conveyor, the novel SA cuts off the DC path, and therefore it reduces the DC power consumption. The simulation results show that the new SA can provide 17% improvement in the speed and consume 86% less energy than WTA sense amplifier, based on an industry standard 1.0 V/65 nm CMOS technology.

Key words: SRAM, sense amplifier, low power, high speed

摘要： 提出一种新型电流模式SRAM灵敏放大器结构。该灵敏放大器采用两级结构, 通过增加一级基于锁存器结构的高速放大电路, 能够快速感应位线的电流变化并放大为全摆幅信号, 不仅能加快求值速度, 而且电流传送器还起到隔离直流通路、减少电路直通功耗的作用。基于1.0 V/65 nm工艺的HSPICE仿真结果显示, 与WTA灵敏放大器相比, 该灵敏放大器速度提高17%, 功耗减少86%。

关键词: SRAM, 灵敏放大器, 低功耗, 高速

CLC Number:

TANG Wenyi,JIA Song,XU Heqing,MENG Qinglong,WANG Yuan,ZHANG Ganggang. A New High Speed Current Mode Sense Amplifier for Low Power SRAM[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

唐文懿,贾嵩,徐鹤卿,孟庆龙,王源,张钢刚. 适用于低功耗SRAM的高速电流模式灵敏放大器[J]. 北京大学学报（自然科学版）.

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URL: https://xbna.pku.edu.cn/EN/

https://xbna.pku.edu.cn/EN/Y2014/V50/I4/681

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A New High Speed Current Mode Sense Amplifier for Low Power SRAM

适用于低功耗SRAM的高速电流模式灵敏放大器

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