Abstract: The reliability simulation under the condition of different stress to charge trapping memory was performed by proposing a specific growth model of interface defect. It can provide a forecast of growth mechanism of interface defect and degeneration of device performance when charge trapping memory is under normal working condition.

Key words: charge trapping memory, reliability simulation, interface defect

摘要： 建立界面缺陷态密度随时间变化的模型。对电荷俘获存储器在不同应力条件下的可靠性进行模拟, 为正常工作情形下, 电荷俘获存储器内界面缺陷的生长机制以及不同应力条件下器件性能的退化提供预测工具。

关键词: 电荷俘获存储器, 可靠性模拟, 界面缺陷