Acta Scientiarum Naturalium Universitatis Pekinensis
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WANG Taihuan1, LUN Zhiyuan2, JIAO Yipeng1, LIU Xiaoyan2, DU Gang2
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王泰寰1,伦志远2,矫亦朋1,刘晓彦2,杜刚2
Abstract: The reliability simulation under the condition of different stress to charge trapping memory was performed by proposing a specific growth model of interface defect. It can provide a forecast of growth mechanism of interface defect and degeneration of device performance when charge trapping memory is under normal working condition.
Key words: charge trapping memory, reliability simulation, interface defect
摘要： 建立界面缺陷态密度随时间变化的模型。对电荷俘获存储器在不同应力条件下的可靠性进行模拟, 为正常工作情形下, 电荷俘获存储器内界面缺陷的生长机制以及不同应力条件下器件性能的退化提供预测工具。
关键词: 电荷俘获存储器, 可靠性模拟, 界面缺陷
CLC Number:
TN389
WANG Taihuan,LUN Zhiyuan,JIAO Yipeng,LIU Xiaoyan,DU Gang. Interface Defect Growth Model and Reliability Simulation of Charge Trapping Memory[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.
王泰寰,伦志远,矫亦朋,刘晓彦,杜刚. 电荷俘获存储器界面缺陷生长模型及其可靠性模拟[J]. 北京大学学报（自然科学版）.
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URL: https://xbna.pku.edu.cn/EN/
https://xbna.pku.edu.cn/EN/Y2014/V50/I4/781
