Abstract: A new flash sense amplifier (SA) is presented, which has a fast pre-charge speed, low power and low supply voltage. Compared to the conventional low-voltage SA, the novel amplifier uses two inverters to improve pre-charge speed by feedback-control pre-charge circuit and to reduce power consumption by taking place of the current source module in reference voltage generation circuit, respectively. In 65 nm CMOS process, the pre-charge time of novel circuit is improved above 15%, and the power dissipation is lowered about 14%.

Key words: flash memory, sense amplifier, low-voltage, pre-charge

摘要： 提出一种新型快速预充Flash灵敏放大器, 能够实现在低电源电压下的快速工作。采用反相器反馈控制的预充电路模块, 使得预充速度得以提升。还提出新型快速预充Flash灵敏放大器的改进型, 进一步使用反相器构成参考电压发生电路, 取消电流源模块, 从而降低功耗。新型电路在速度和功耗上有较大改善, 65 nm CMOS工艺条件下仿真结果表明, 相比传统结构，新结构预充速度提高15%, 功耗降低14%。

关键词: 快闪存储器, 灵敏放大器, 低压, 预充