Abstract: A miniaturized K-band VCO (voltage controlled oscillator) using GaAs pHEMT device is presented. A compact mushroom-type edge-located vias electromagnetic bandgap (ELV-EBG) resonator loaded with a varactor is adopted instead of conventional resonator. The parallel feedback structure VCO is designed to operate from 22.9 GHz to 25.6 GHz. The measured results show that the proposed VCO provides a maximum output power of 10.4 dBm at 23.6 GHz with output power flatness less than 1 dB from 24 GHz to 25.4 GHz. The phase noise of the VCO with ELV-EBG resonator is around ?95 dBc/Hz at 1 MHz offset from carrier. The size of this compact VCO is about 17 mm×7.5 mm.

Key words: K-band, VCO, pHEMT, EBG

摘要： 报道一种工作在K 波段的压控振荡器的设计和性能。该压控振荡器采用基于pHEMT 工艺的有源器件, 用紧凑的边缘通孔电磁带隙谐振结构替代传统的谐振电路, 实现压控振荡器的小型化。测试结果表明, 该电路工作频段为 22.9~25.6 GHz, 在 23.6 GHz的最大输出功率为 10.4 dBm, 且在24~25.6 GHz 频段的输出功率平坦度小于 1 dB。在偏离载频 1 MHz处测得的压控振荡器相位噪声约为?95 dBc/Hz。整体电路面积为 17 mm×7.5 mm。

关键词: K波段, 压控振荡器, 赝高电子迁移率晶体管, 电磁带隙