利用托马斯-费米方程对晶体平面沟道场的研究

北京大学学报（自然科学版）

利用托马斯-费米方程对晶体平面沟道场的研究

刘英太

北京大学物理学院，北京，100871

收稿日期:2002-02-27 出版日期:2003-01-20 发布日期:2003-01-20

Study for the Electric Field in Crystal Planar Channeling with Thomas-Fermi Methods

LIU Yingtai

School of Physics, Beijing University, Beijing, 100871

Received:2002-02-27 Online:2003-01-20 Published:2003-01-20

摘要/Abstract

摘要： 根据同一晶向的晶面具有平移周期对称性，将托马斯-费米方程引入晶体的平面沟道中求解Si(110)平面沟道内的电场；然后把求得的结果用于计算平面沟道临界角。结果表明：用托马斯-费米方程求得的平面沟道场能较好地描述Si(110)平面沟道内的电场特征。

关键词: 平面沟道, 原子实, 临界角

Abstract: According to the transnational periodically symmetry of crystal plane in its space, author introduce the Thomas-Fermi equation in crystal planar channeling electric fields; then calculate the electric fields of single crystal Si(110) and its critical angle. The good fits with the experimental data are obtained. The results show that the Thomas-Fermi equation in crystal planar channeling may describe the characters of planar channeling.

Key words: planar channeling, atomic kernel, critical angle

中图分类号:

O572.21

刘英太. 利用托马斯-费米方程对晶体平面沟道场的研究[J]. 北京大学学报（自然科学版）.

LIU Yingtai. Study for the Electric Field in Crystal Planar Channeling with Thomas-Fermi Methods[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.