北京大学学报(自然科学版)

一种基于电磁带隙谐振结构的K波段压控振荡器

徐峰1,王新安1,2,陈勖1   

  1. 1.北京大学深圳研究生院集成微系统科学工程与应用重点实验室, 深圳 518055; 2. 北京大学微电子学研究院,北京 100871;
  • 收稿日期:2012-02-14 出版日期:2013-05-20 发布日期:2013-05-20

A K-Band VCO Based on EBG Resonator

XU Feng1, WANG Xin’an1,2, CHEN Xu1   

  1. 1. Key Lab of Integrated Micro System Science Engineering and Application, Shenzhen Graduate School of Peking University, Shenzhen 518055; 2. Institute of Microelectronics Peking University, School of Electronics Engineering and Computer Science,Peking University, Beijing 100871;
  • Received:2012-02-14 Online:2013-05-20 Published:2013-05-20

摘要: 报道一种工作在K 波段的压控振荡器的设计和性能。该压控振荡器采用基于pHEMT 工艺的有源器件, 用紧凑的边缘通孔电磁带隙谐振结构替代传统的谐振电路, 实现压控振荡器的小型化。测试结果表明, 该电路工作频段为 22.9~25.6 GHz, 在 23.6 GHz的最大输出功率为 10.4 dBm, 且在24~25.6 GHz 频段的输出功率平坦度小于 1 dB。在偏离载频 1 MHz处测得的压控振荡器相位噪声约为?95 dBc/Hz。整体电路面积为 17 mm×7.5 mm。

关键词: K波段, 压控振荡器, 赝高电子迁移率晶体管, 电磁带隙

Abstract: A miniaturized K-band VCO (voltage controlled oscillator) using GaAs pHEMT device is presented. A compact mushroom-type edge-located vias electromagnetic bandgap (ELV-EBG) resonator loaded with a varactor is adopted instead of conventional resonator. The parallel feedback structure VCO is designed to operate from 22.9 GHz to 25.6 GHz. The measured results show that the proposed VCO provides a maximum output power of 10.4 dBm at 23.6 GHz with output power flatness less than 1 dB from 24 GHz to 25.4 GHz. The phase noise of the VCO with ELV-EBG resonator is around ?95 dBc/Hz at 1 MHz offset from carrier. The size of this compact VCO is about 17 mm×7.5 mm.

Key words: K-band, VCO, pHEMT, EBG

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