北京大学学报（自然科学版）

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常压化学气相沉积制备氧化硅包敷的硫化铋纳米线

张昊旭   

  1. 华北电力大学数理系, 北京 102206;
  • 收稿日期:2011-04-08 出版日期:2012-03-20 发布日期:2012-03-20

Atmospheric Pressure Chemical Vapor Deposition Synthesis of Silica-Sheathed Bismuth Sulfide Nanowires

ZHANG Haoxu   

  1. Department of Mathematics and Physics, North China Electric Power University, Beijing 102206;
  • Received:2011-04-08 Online:2012-03-20 Published:2012-03-20

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摘要： 通过引入CuCl-Si混合粉末和水蒸气作为氧化硅的原料, 应用常压化学气相沉积方法, 从廉价的氯化铋和硫粉出发, 在450℃下精确控制合成了不同形态的氧化硅包敷的硫化铋纳米线, 包括具有光滑表面的纳米线和缀有硫化铋纳米珠的纳米线。利用高分辨透射电镜对产物进行了精细的表征, 讨论了精确控制合成的机制。

关键词: 硫化铋, 纳米线, 鞘层, 化学气相沉积

Abstract: By introduction of a CuCl-Si mixture and water vapor into the system as the silica source, silica sheathed Bi2S3 nanowires with smooth surfaces or decorated with nanobeads were all successfully synthesized with precise control at 450℃ using the cheap BiCl3 and sulfur powder as the reactants with the atmospheric pressure chemical vapor deposition (APCVD) method. High resolution transmission electron microscope (HRTEM) was used to investigate the details of the products. The mechanism for the precise control to the synthesis process was discussed.

Key words: Bi2S3, nanowire, sheath, chemical vapor deposition (CVD)

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