北京大学学报（自然科学版）

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共振隧穿现象与LED失效模型的分析方法

袁晨1,2,严伟1,2   

  1. 1. 上海北京大学微电子研究院SHRIME, 上海 201203; 2. 北京大学软件与微电子学院, 北京 100871;
  • 收稿日期:2010-11-04 出版日期:2011-11-20 发布日期:2011-11-20

LED Failure Analysis with Phenomenon of Resonant Tunneling Model

YUAN Chen1,2, YAN Wei1,2   

  1. 1. ShangHai Research Institute of MicroElectronics SHRIME, Peking University, Shanghai 201203; 2. School of Software and Microelectronics, Peking University, Beijing 100871;
  • Received:2010-11-04 Online:2011-11-20 Published:2011-11-20

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摘要： 针对实验中发现的受静电损伤LED与共振隧穿二极管(RTD)模型有相似表现的现象, 提出一种LED失效分析方法。经过500~3000 V的HBM模型损伤, 一部分失效LED的I-V曲线表现出类似共振隧穿二极管(RTD), 正向电流呈现隧道电流的特征, 证实静电损伤路径穿越了LED内量子阱, 改变了内部的结构。将这种曲线与RTD做对比, 并推广至其他失效曲线的分析, 建立了一套通过伏安特性曲线对比方法, 分析LED受损位置。这种失效模型分析方式可以不借助微观实验, 直接进行判断, 并可通过经验不断丰富。

关键词: LED, 静电, 失效分析

Abstract: The authors provided a failure analysis method of LEDs based on the fact that LEDs suffered electro- static damage sometimes were familiar with the resonant tunneling diode (RTD) model. After they were destroyed by HBM model over 500-3000 V, part of the failure LEDs showed as a resonant tunneling diode (RTD) in I-V curves, which proved that the electrostatic damage path went through the LED internal quantum wells. By contrasting with more devices, a set of I-V curve analysis method can be established for the location of LED damage. This failure analysis with the advantage of reducing observations by OBIRCH can be enriched through experience.

Key words: LED, electrostatic, failure analysis

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