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中文
13.5 GHz
f
T
SiGe Heterojunction Bipolar Transistor Fabricated by Planar Technology
JIA Lin,NI Xuewen,MO Bangxian,GUAN Xudong,ZHANG Lu,NING Baojun,HAN Ruqi,LI Yongkang,ZHOU Junming
Acta Scientiarum Naturalium Universitatis Pekinensis . 2001, (
3
): 353 -358 .
