Abstract: Er-doped Si-rich nitride ( SRN ∶Er) films and three-period superlattices of SRN ∶Er Ni were deposited by reactive magnetronsputtering technique and annealed at 1100 ℃. The photo luminescence spectra of SRN ∶Er films show two emission bands, one centered at 665～750 nm and another peaked at 1. 54μm, where the 665～750 nmone is due to Si nanocrystals in SRN and the 1. 54μmone is characteristic for Er3+. The photo luminescence spectra of the super lattices exhibit fine structures of 3 + Er light emission around 520, 550 and 850 nm and a 12-fold enhanced Er light emission at 1. 54 μm. The appearance of these fine structures indicates that the local environments around Er3 + become ordered and Er3+ is much more optically active in such ordered environments than in SRN ∶Er films. Raman-scattering spectra measurements demonstrate an increase in the number of Sinanocrystals. Therefore, the 12-fold enhancement at 1.54μmis a result of the enhancement in the Er3+ optical activation and the increase in the number of Si nanocrystals .

Key words: Si-rich nitride, Er, Ni, photoluminescence

摘要： 采用反应磁控溅射技术沉积了掺Er的富硅氮化硅(SRN∶Er)薄膜和SRN∶Er Ni 3 个周期的超晶格, 两种薄膜都在1100 ℃进行退火实验。SRN ∶Er薄膜的光致发光谱为一个峰位在665 ～750 nm 的发光带和一个峰位在1. 54μm 的发光带, 前者来源于SRN 薄膜中的纳米硅, 后者为Er3+ 的特征发射。SRN ∶Er Ni超晶格的光致发光谱上出现Er3+ 在520 ,550 和850 nm 附近的精细结构, 并且Er3 + 在1. 54μm 的发光有12倍的增强。光谱精细结构的出现证明Er3+ 的微观环境由于掺Ni而变得有序。与在SRN 中相比, 在这种有序环境中Er3 + 的光学活性有明显的增强。拉曼散射光谱测量证明在SRN ∶Er Ni超晶格中纳米硅的数目比在SRN ∶Er 薄膜中有一定的增加。因而,Er3+ 1. 54 μm 发光 12 倍的增强是Er3+本身光学活性的增强和纳米硅数目的增加共同作用的结果。

关键词: 富硅氮化硅, Er, Ni, 光致发光