The charging process of FR4 (epoxy glass cloth laminate) dielectrics and PTFE (polytetrafluoroethylene) dielectrics in Jupiter orbit are simulated using GEANT4-RIC method. The deep dielectric charging potential under different grounding states, different dielectrics thickness and different shielding layer thickness are calculated. The results show that the deep dielectric charging potential is related to the grounding mode of dielectrics. Double-side grounding can greatly reduce the deep dielectric charging potential. Using thinner dielectrics and increasing the thickness of shielding layer are also effective ways to reduce the deep dielectric charging potential.

采用GEANT4-RIC方法, 对处于木星轨道的星用电路板FR4 (环氧玻璃布层压板)介质和电缆PTFE (聚四氟乙烯)介质的充电过程进行模拟研究, 计算不同接地状态、不同介质厚度和不同屏蔽层厚度条件下, 介质内部的充电电势。研究结果表明, 介质充电电势与介质接地方式密切相关, 双面接地可以大大降低介质的充电电势; 使用薄介质以及增加屏蔽层厚度也是降低介质内部充电电势的有效方法。