Novel Low Power QSBDI Structure for IR ROIC

Abstract

Abstract: A novel low power Quad-Share Buffered Direct-Injection (QSBDI) readout circuit for large format staring ROIC is proposed. In this circuit, four pixels share one common buffer amplifier. With switches' cooperation, the circuit can achieve ITR (integrate then readout) and IWR (integrate while readout) function. With area of 30 μm×30 μm, the capacitor in the pixel is about 0.9 pF and 4.2 pC charge storage capacity, but the power of single pixel is about 500 nW. At the same time, the FPN of the pixel is reduced to order of local mismatch and independent of the format of pixel array. Those characters made QSBDI an outstanding pixel structure for large format 2-D ROIC. An experimental 128×128-pixel ROIC is designed and it will be fabricated with 0.5 μm DPTM n-well CMOS process.

Key words: ROIC, low power, QSBDI

摘要： 提出了一种新型红外读出电路的像素结构??四像素共用BDI结构（Quad-Share Buffered Direct-Injection: QSBDI）。在这种电路结构中，4个相邻的像素共用一个反馈放大器。在开关的控制下，像素可以实现积分然后读出（ITR）和积分同时读出（IWR）功能。在30 μm×30 μm的像素面积中，实现了略大于0.9 pF的电容和4.2 pC的电荷存储能力，平均功耗只有500 nW。在实现低功耗的同时，该结构使像素级的固定模式噪声（FPN）只来源于局部的失配，与整个像素阵列的失配无关，从而使得这种像素结构非常适用于大规模2-D 读出电路（Readout IC：ROIC）。后续的版图设计以及后仿真也表明这种像素结构是一种非常实用的像素结构。基于该结构的128×128的测试芯片已经设计完成，将在0.5 μm工艺下进行流片测试。

关键词: 红外读出电路, 低功耗, 四像素共用BDI结构

CLC Number:

TN 432

LIU Dan,LU WengaoCHEN Zhongjian,JI Lijiu,ZHAO Baoying. Novel Low Power QSBDI Structure for IR ROIC[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

刘丹,鲁文高,陈中建,吉利久,赵宝瑛. 新型低功耗QSBDI红外读出电路设计[J]. 北京大学学报（自然科学版）.

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URL: https://xbna.pku.edu.cn/EN/

https://xbna.pku.edu.cn/EN/Y2007/V43/I5/659

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Novel Low Power QSBDI Structure for IR ROIC

新型低功耗QSBDI红外读出电路设计

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