Acta Scientiarum Naturalium Universitatis Pekinensis

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A High-Order Temperature Compensated CMOS Bandgap Reference

CHEN Jianghua, NI Xuewen, MO Bangxian   

  1. Department of Microelectronics, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871;
  • Received:2007-05-25 Online:2008-07-20 Published:2008-07-20



  1. 北京大学信息科学技术学院微电子学系,北京100871;

Abstract: A high-order temperature compensated bandgap reference (BGR) based on CSMC 0.5-μm 2P3M n-well mixed signal CMOS process is presented. This novel proposed CMOS bandgap reference takes advantage of both a Buck's voltage transfer cell and a temperature independent current, to provide a high-order temperature compensation of the base-emitter voltage V_BE. Cascode structures are also introduced in this CMOS bandgap reference to improve the power supply rejection ratio (PSRR). This circuit achieves 5.6ppm/℃ of temperature coefficient with temperature range from -20 to 100℃ at 5V power supply. The variation in the output voltage of the bandgap reference is 0.4mV when power supply changes from 4V to 6V.

Key words: analog integrated circuits, CMOS, bandgap reference, low temperature coefficient, high-order temperature compensation

摘要: 介绍了一种基于CSMC 0.5-μm 2P3M n-阱混合信号CMOS工艺的高阶温度补偿的带隙参考源。该CMOS带隙参考源利用了Buck电压转换单元和与温度无关的电流,提供了一种对基极-发射极电压V_BE的高阶温度补偿。它还采用共源共栅结构以提高电源抑制比。在5V电源电压下,温度变化范围为-20~100℃时,该带隙参考源的温度系数为5.6ppm/℃。当电源电压变化范围为4~6V时,带隙参考源输出电压的变化为0.4mV。

关键词: 模拟集成电路, CMOS, 带隙参考源, 低温度系数, 高阶温度补偿

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