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Extracting the Interface Trap Density Using the Proportional Difference Method from the Output Characteristic of NMOSFET

ZHANG Heqiu, XU Mingzhen, TAN Changhua   

  1. Institute of Microelectronics, Peking University, Beijing, 100871
  • Received:2003-11-04 Online:2004-05-20 Published:2004-05-20


张贺秋, 许铭真, 谭长华   

  1. 北京大学微电子研究院,北京,100871

Abstract: The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress. This is the effect of traps generated during the stress. In this paper, the threshold voltage, the peak of proportional difference and the interface trap density of NMOSFET are extracted from the output characteristic by the proportional difference method. The relationship between the threshold voltage and the peak of proportional difference, and between the interface trap density and stress time are also acquired. The method is also applicable to the PMOSFET. This is a simple, quick technique. And the data can be analyzed during the process of measuring.

Key words: Interface trap density, high electric field stress, proportional difference, MOSFET

摘要: 在均匀的高电场应力下,MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。这是由于在应力过程中产生的缺陷引起的。在本文中,用比例差分方法从NMOSFET器件的输出特性提取了阈值电压、输出特性的比例差分的峰值和界面陷阱密度。得到了阈值电压和比例差分峰值,界面陷阱密度和应力时间的关系。此种方法也适用于PMOSFET器件。这是一个简单而快捷的技术。用这个技术实验数据可以在测量的过程中进行分析。

关键词: 界面陷阱密度, 高电场应力, 比例差分, MOSFET

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