Abstract: Apparently, silicon-a group-IV semiconductor is the basis of the multi-billion dollar industry of microelectronics. On the other hand, our knowledge on almost every aspect of group-IV semiconductor surfaces and interfaces is quite incomplete. Thereby, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, a systematic investigation on the surfaces and interfaces has been carrying out in a bid to gain a more comprehensive understanding of them. In the investigation more effort has been put on germanium surfaces because they have been, from the basic scientific point of view, unfairly neglected. As a result, the atomic structure of the most stable high-index surface Ge(113) and several others, such as Ge(103), (216), and (105), has been determined. It has been found that not only the adatoms on Ge(111) but also, surprisingly, the subsurface interstitial atoms of Ge(113) are able to migrate at room temperature, and the activation energy of the migrations has also been determined with a high precision. In the interface aspect, the three common characteristics of the III/IV interfaces, the prototype of group-IV interfaces, have been disclosed for the first time.

Key words: scanning tunneling microscopy, germanium, silicon, high-index surfaces, metal/semiconductor interfaces, scanning tunneling microscopy, germanium, silicon, high-index surfaces, metal/semiconductor interfaces

摘要： 为了更全面地了解Ⅳ族半导体表面和界面的结构和性质，以扫描隧道显微镜(STM)为主要手段，辅以LEED和AES等常规手段，对它们作了系统的研究。本文是对最近许多结果的综述，首先介绍几个重要的Ge高指数表面的结构，然后对发生在Ge(111)和(113)表面和亚表面的原子的扩散和迁移运动作了介绍，最后阐述决定Ⅲ族金属/Ⅳ族半导体界面的结构的3个共同要素。

关键词: 扫描隧道显微镜(STM), 锗, 硅, 高指数表面, 金属/半导体界面, 扫描隧道显微镜(STM), 锗, 硅, 高指数表面, 金属/半导体界面