Abstract: On the basis of experimental results, a computer analysis model has been developed using a numerical solution of Poisson's equation for a hydrogenated amorphous silicon (a-Si:H) Schottky barrier structure subjected to light soaking. The calculations agree with experimental results and further indicate that due to carrier trapping with light soaking, the increased or decreased space charge density changes electric field distribution and leads to a wider quasi-neutral region (low field "dead layer") in the structure, resulting in reduced carrier collection length. This is an important cause of light-induced degradation of a-Si:H Schottky barrier solar cells. Thus, a new way to improve the stability of a-Si:H solar cells may be proposed.

Key words: carrier trapping effects, light-induced degradation in a-Si:H solar cells, Scharfetter-Gummel solution

摘要： 基于实验结果，应用Scharfetter-Gummel解法数值求解Poisson方程，对经高强度光辐照过的a-Si∶H Schottky势垒结构太阳能电池进行计算机数值分析。计算结果与实验一致并且进一步指明，随着光辐照发生的载流子俘获造成的a-Si∶H中空间电荷净增加或减少都会使电池内部电场分布发生变化和准中性区(低场“死层”)的出现，从而导致载流子收集长度的减少。这是a-Si∶H Schottky势垒结构太阳能电池光致性能衰退的重要原因。于是，一种提高a-Si∶H太阳能电池稳定性的新途径有可能被提出。

关键词: 载流子俘获效应, a-Si∶H太阳能光致性能衰退, Scharfetter-Gummel解法