Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode

Acta Scientiarum Naturalium Universitatis Pekinensis

Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode

GU Yongtao¹, WEI Feng¹, SUN Tuo¹, XU Wanjin¹, RAN Guangzhao¹, ZHANG Yong², NIU Qiaoli², QIN Guogang^1,2

1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871; 2. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631;

Received:2011-03-29 Online:2012-03-20 Published:2012-03-20

体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件

谷永涛¹,魏峰¹,孙拓¹,徐万劲¹,冉广照¹,章勇²,牛巧利²,秦国刚^1,2

1. 北京大学物理学院介观物理国家重点实验室, 北京 100871; 2. 华南师范大学光电子材料与技术研究所, 广州 510631;

Abstract

Abstract: Polymer white light-emitting diodes (PWLEDs) with p-type Si and nanometer-thick (~10 nm) polycrystalline p-Si anode are reported. The structures of the PWLEDs are Si anodes/ PEDOT:PSS/ MEH-PPV: PFO/Cs₂CO₃/Sm/Au. PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer. It is found that when MEH-PPV is 0.13%, the PWLEDs show white emission with CIE coordinates of (0.372, 0.391). The optimized p-Si anode resistivity of the PWLEDs is investigated. When the resistivity of p-Si is 0.079 Ω•cm, a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained. Furthermore, polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer, the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm. In comparasion with PWLEDs with p-Si anode, the maximum efficiency has raised 94% and 43% respectively.

Key words: polymer white light-emitting diode, p-Si, ultrathin polycrystalline Si, MEH-PPV, PFO

摘要： 分别以p型体硅和p型薄膜微晶硅为阳极, 以掺入MEH-PPV的PFO为发光层, 以透明金属Sm/Au为阴极, 制作了顶发光白光器件。器件结构是: 硅阳极/PEDOT:PSS/MEH-PPV:PFO/Cs₂CO₃/Sm/Au。通过调节MEH-PPV在PFO中的质量百分比, 改进了白光器件的发射色度。当MEH-PPV的质量百分比为0.13%时, 发光在白光范围, CIE色坐标为(0.372, 0.391)。研究了器件发光效率对体硅阳极电阻率的影响, 当体硅阳极电阻率为0.079 Ω•cm时, 器件电流效率和功率效率都达到极大, 分别是0.191 cd/A和0.131 lm/W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极, 通过调节Ni层厚度, 优化器件效率。当Ni层厚度为2 nm时, 薄膜硅阳极器件的电流效率和功率效率分别达到最大值: 0.371 cd/A和0.187 lm/W, 相对于最佳电阻率体硅阳极器件分别提高了94%和43%。

关键词: 聚合物白光, p型体硅, 薄膜微晶硅, MEH-PPV, PFO

CLC Number:

O469

GU Yongtao,WEI Feng,SUN Tuo,XU Wanjin,RAN Guangzhao,ZHANG Yong,NIU Qiaoli,QIN Guogang. Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.

谷永涛,魏峰,孙拓,徐万劲,冉广照,章勇,牛巧利,秦国刚. 体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件[J]. 北京大学学报（自然科学版）.

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https://xbna.pku.edu.cn/EN/Y2012/V48/I2/173

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