Acta Scientiarum Naturalium Universitatis Pekinensis

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Study for the Electric Field in Crystal Planar Channeling with Thomas-Fermi Methods

LIU Yingtai   

  1. School of Physics, Beijing University, Beijing, 100871
  • Received:2002-02-27 Online:2003-01-20 Published:2003-01-20



  1. 北京大学物理学院,北京,100871

Abstract: According to the transnational periodically symmetry of crystal plane in its space, author introduce the Thomas-Fermi equation in crystal planar channeling electric fields; then calculate the electric fields of single crystal Si(110) and its critical angle. The good fits with the experimental data are obtained. The results show that the Thomas-Fermi equation in crystal planar channeling may describe the characters of planar channeling.

Key words: planar channeling, atomic kernel, critical angle

摘要: 根据同一晶向的晶面具有平移周期对称性,将托马斯-费米方程引入晶体的平面沟道中求解Si(110)平面沟道内的电场;然后把求得的结果用于计算平面沟道临界角。结果表明:用托马斯-费米方程求得的平面沟道场能较好地描述Si(110)平面沟道内的电场特征。

关键词: 平面沟道, 原子实, 临界角

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