Acta Scientiarum Naturalium Universitatis Pekinensis

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Modeling and Optimizing of Carbon Nanotube Based CMOS Logic Circuit

WANG Hao, ZHANG Zhiyong, WANG Sheng, CHEN Qing   

  1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, School of Electronics Engineering and Computer Science, Peking University, Beijing, 100871;
  • Received:2008-04-28 Online:2009-05-20 Published:2009-05-20



  1. 纳米器件物理与化学教育部重点实验室,北京大学信息科学技术学院电子系,北京100871;

Abstract: Carbon nanotube based CMOS (complementary metal-oxide-semiconductor) field effect transistor inverters were modeled through SPICE(simulation program with integrated ciruit emphasis) by using table-lookup model. Simulation results were verified by the experimental results and good agreement was achieved. The effects of supplied voltage and the threshold voltage to the power and the delay characteristics of the inverters were investigated by DC analysis and TRAN analysis, and optimum strategy was given. In addition, optimum strategies for NOR and NAND logic circuits were given by the simulation using the semi-empirical table-lookup model.

Key words: carbon nanotube, field effect transistor, table-lookup model, inverter, DC characteristics, TRAN characteristics

摘要: 基于查表模型,利用SPICE(simulation program with integrated ciruit emphasis)电路模拟软件,首次模拟了互补型碳纳米管(CNT)场效应晶体管组成的反相器,模拟结果和实验结果吻合,实现了碳纳米管场效应晶体管的实际测量数据和半经验查表模型的衔接。利用直流特性分析和瞬态特性分析等仿真手段研究了CNT CMOS反相器的功耗和门延迟特性随工作电压和器件阈值电压变化的关系,并对电路设计和工作状态提出了优化方案。进一步模拟了与非门和或非门,并提出了电路的优化方案。

关键词: 碳纳米管, 场效应晶体管, 查表模型, 反相器, 直流特性, 瞬态特性

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