Acta Scientiarum Naturalium Universitatis Pekinensis
WAN Xinheng，ZHANG Xing，GAO Wenyu, HUANG Ru，WANG Yangyuan
An analytical MOSFET threshold voltage shift model due to radiation in the low-dose range has been developed for circuit simulations. Experimental data in the literature shows that the model predictions are in good agreement. It is simple in functional form and hence computationally efficient. It can be used as a basic circuit simulation tool for analysing MOSFET exposed to a nuclear environment up to about 1Mrad(Si). In accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated PMOS devices. However, if the radiation sensitivity is defined in the way we did it, the results indicated NMOS rather than PMOS devices are more sensitive, especially at low doses. This is important from the standpoint of their possible application in dosimetry.
threshold voltage shift,
WAN Xinheng,ZHANG Xing,GAO Wenyu,HUANG Ru,WANG Yangyuan. Simulating Threshold Voltage Shift of MOS Devices Due to Radiation in the Low-dose Range[J]. Acta Scientiarum Naturalium Universitatis Pekinensis.
万新恒,张兴,高文钰,黄如,王阳元. 低剂量辐照条件下的MOSFET因辐照导致的阈值电压漂移的模拟[J]. 北京大学学报（自然科学版）.
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