Acta Scientiarum Naturalium Universitatis Pekinensis

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The Application of Combining RSM Experiment Design and Simulation to the Optimisation of a Burried Channel PMOS Device

GAN Xuewen1, WALTON A J2   

  1. 1Institute of Microelectronics, Peking University, Beijing 100871; 2Department of Electrical Engineering, University of Edinburgh, Edinburgh, EH9 3JL, UK
  • Received:1995-12-22 Online:1996-09-20 Published:1996-09-20


甘学温1,WALTON A J2   

  1. 1北京大学微电子学研究所,北京,100871;2爱丁堡大学电子工程系,爱丁堡,英国,EH9 3JL

Abstract: The combination of RSM and TCAD is a potentially useful technique to reduce the time and cost in developing and optimising IC processes. The methodology and advantage of combining experiment design and simulation to obtain model equations that are used in the optimisation of IC process havebeen demonstrated. D-optimal design, together with other strategies, were employed to improve the model fit. The resulting response surfaces were used in the prediction and optimisation of device characteristics for a sub-micron burried p-channel MOSFET. The predicted results obtained from the response surfaces agreed well with the simulated results at the optimum process conditions.

Key words: design of experiment, control factors, response surface, model fit, optimisation

摘要: 响应表面方法与TCAD相结合是一个极具潜力的有用技术,它可以极大地减少研制和优化IC工艺的时间和成本。本文介绍了用响应表面的实验设计与模拟相结合获得模型方程并用于工艺优化的方法和优点。D-优化的设计方法和其他措施结合改善模型拟合精度,得到的响应表面用于对亚微米埋沟道PMOS器件性能进行预测和优化。用响应表面得到优化的工艺条件,在此条件下由响应表面预测的结果与模拟结果取得了很好的一致。

关键词: 实验设计, 控制因素, 响应表面, 模型拟合, 优化

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