Acta Scientiarum Naturalium Universitatis Pekinensis

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Design of Very High Speed Poly-Si Emitter ECL Shift Registers Integrated Circuit

MO Bangxian, ZHANG Lichun, NI Xuewen, NING Baojun, WANG Yangyuan   

  1. Institute of Microelectronics, Peking University, Beijing, 100871
  • Received:1996-01-15 Online:1996-09-20 Published:1996-09-20



  1. 北京大学微电子学研究所,北京,100871

Abstract: Presented a very high speed ECL shift register circuit, the structure of poly-Si emitter NPN bipolar device is given and the key technologies such as salicide contact, deep trench isolation, shallow junction and thin base formation are described. Using this advanced Si bipolar technology, the average gate delay less than 50ps is achieved for 19-stage ring oscillator with 3 μm feature size. The circuit and layout design for 600-gate are introduced. The influences of interconnection material and line length on the operating frequency of 600-gate and 800-gate are disscussed in detail.

Key words: polysilicon emitter transistor, ECL integrated circuit, shift register

摘要: 报道了600门和800门两种ECL超高速移位寄存器;介绍了多晶硅发射极双极晶体管的结构和有关先进工艺,包括深槽隔离、多晶硅发射极、钴硅化物接触和浅结薄基区等;使用这种多晶硅发射极晶体管,3μm特征尺寸设计的19级环形振荡器的平均门延迟小于50ps。给出了600门移位寄存器的电路设计和版图设计,讨论了互连线和双层金属布线对600门和800门移位寄存器的最高工作频率的影响。

关键词: 多晶硅发射极晶体管, ECL集成电路, 移位寄存器

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