Acta Scientiarum Naturalium Universitatis Pekinensis

Previous Articles     Next Articles

Fabrication of Nitrogen-Doped Carbon Nanotube Arrays and Their Field Emission Properties

CHAI Yang, YU Ligang, WANG Mingsheng, ZHANG Qifeng, WU Jinlei1   

  1. Department of Electronics, School of Electronics Engineering and Computer Science, Peking University, Beijing,100871; 1E-mail: jlwu@pku.edu.cn
  • Received:2004-10-27 Online:2006-01-20 Published:2006-01-20

掺氮碳纳米管阵列的制备及其场发射特性

柴扬,于利刚,王鸣生,张琦锋,吴锦雷1   

  1. 北京大学信息科学技术学院电子学系,北京,100871;1E-mail: jlwu@pku.edu.cn

Abstract: Carbon nanotube (CNT) arrays have been produced on silicon substrate by an one-step route based on the pyrolysis of mixture of the ferrocene and melamine under well-chosen synthesis condition. Transmission electron microscope (TEM) and scanning electron microscope (SEM) studies showed the products were all multi-walled CNTs that are about 50nm in diameter and about 15μm in length, growing outward separately and perpendicularly to the substrate. X-ray photoelectron spectroscopy (XPS) and TEM studies revealed that the CNTs were nitrogen-doped. Field emission measurement suggested that the nitrogen-doped CNT arrays begin to emit electron at electric field of 1.60V/μm, and field emission images exhibited the high emission sites density.

Key words: carbon nanotubes, doping, field emission

摘要: 使用结构简单的单温炉设备,以二茂铁为碳源与催化剂,三聚氰胺为氮源在硅基底制备出了碳纳米管阵列。所得的碳纳米管为多壁结构,单根碳纳米管的平均直径为50nm,长度为15μm,有着很好的定向性。透射电子显微镜(TEM)和X射线光电子谱(XPS)分析表明所得的碳纳米管是氮掺杂的。利用场发射显微镜研究了掺氮碳纳米管阵列的平面场发射特性,相应的开启场强为1.60V/μm,场发射图像表明了其有较高的场发射点密度。

关键词: 碳纳米管, 掺杂, 场发射

CLC Number: