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High Surface Hole Concentration P-type GaN Using Mg Implantation

LONG Tao,YANG Zhijian,ZHANG Guoyi   

  1. Department of Physics, Peking University, Beijing, 100871
  • Received:2000-06-30 Online:2001-09-20 Published:2001-09-20



  1. 北京大学物理学系,北京,100871

Abstract: Mg ions were implanted on Mg-doped GaN grown by metalorganic chemical vapor deposition(MOCVD). The p-type GaN was achieved with high hole concentration(8.28×1017cm-3)conformed by Van der pauw Hall measurement after annealing at 800℃ for 1h. This is the first experimental report of Mg implantation on Mg-doped GaN and achieving p-type GaN with high surface hole concentration.

Key words: MOCVD, ion implantation, Mg-doped GaN

摘要: 应用Mg离子注入MOCVD法生长掺杂Mg的GaN中,在经过800℃, 1h的退火后,获得高空穴载流子浓度(8.28×1017cm-3)的P-型GaN。首次报道了实验上通过Mg离子注入到Mg生长掺杂的GaN中并获得高的表面空穴载流子浓度。

关键词: MOCVD, 离子注入, Mg掺杂GaN

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